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Effects of an Applied Electric Field on Silicon Nanocrystals Photoluminescence

Published online by Cambridge University Press:  01 February 2011

Alexandre Lacombe ,
David Barba ,
Félix Beaudoin ,
François Martin  and
Guy G. Ross
Alexandre Lacombe
Affiliation:
lacombe@emt.inrs.ca, INRS-EMT, Varennes, Canada
David Barba
Affiliation:
barba@emt.inrs.ca, INRS-EMT, Varennes, Canada
Félix Beaudoin
Affiliation:
felix.beaudoin@usherbrooke.ca, INRS-EMT, Varennes, Canada
François Martin
Affiliation:
martin@emt.inrs.ca, INRS-EMT, Varennes, Canada
Guy G. Ross
Affiliation:
ross@emt.inrs.ca, INRS-EMT, Varennes, Canada
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Abstract

The photoluminescence (PL) of silicon nanocrystals (Si-nc) obtained by ion implantation in the oxide layer of a MOS structure was measured during the application of a slowly varying electric field generated by biasing the gate electrode. As a result, both PL intensity enhancement and quenching have been observed. These reproducible intensity modulations exhibit a hysteresis effect when the applied electric field is varied and persist even after it is removed. The behavior of the current density and the absence of wavelength shift in the PL spectra during gate voltage sweeps suggest that these modulations are related to the motion of charge carriers rather than to field-induced mechanisms such as quantum-confined Stark effect (QCSE).

Keywords

luminescencenanostructureSi
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1145: Symposium MM – Application of Group IV Semiconductor Nanostructures , 2008 , 1145-MM01-07
Copyright
Copyright © Materials Research Society 2009

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References

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