Hostname: page-component-848d4c4894-4rdrl Total loading time: 0 Render date: 2024-07-07T10:23:38.042Z Has data issue: false hasContentIssue false

Effects of Antimony on the Thermoelectric Properties of the Cubic Pb9.6SbyTe10−xSex Materials

Published online by Cambridge University Press:  01 February 2011

Pierre Ferdinand Poudeu Poudeu
Affiliation:
fpoudeu@chemistry.msu.edu, Michigan State University, Department of Chemistry, 407 Chemistry building, East Lansing, Michigan, 48824, United States, (517)355-9715(176)
Jonathan D'Angelo
Affiliation:
dangelo4@msu.edu, Michigan State University, Department of Electrical and Computer Engineering, United States
Adam Downey
Affiliation:
downeyad@egr.msu.edu, Michigan State University, Department of Electrical and Computer Engineering
Robert Pcionek
Affiliation:
pcionekr@msu.edu, Michigan State University, Department of Chemistry and Center for Fundamental Materials Research, United States
Joseph Sootsman
Affiliation:
sootsma3@chemistry.msu.edu, Michigan State University, Department of Chemistry and Center for Fundamental Materials Research, United States
Zhenhua Zhou
Affiliation:
zzh@umich.edu, University of Michigan, Department of Physics, United States
Oleg Palchik
Affiliation:
palchiko@umich.edu, University of Michigan, Department of Physics, United States
Timothy P. Hogan
Affiliation:
hogant@msu.edu, Michigan State University, Department of Electrical and Computer Engineering, United States
Ctirad Uher
Affiliation:
cuher@umich.edu, University of Michigan, Department of Physics, United States
Mercouri G. Kanatzidis
Affiliation:
kanatzidis@chemistry.msu.edu, Michigan State University, Department of Chemistry and Center for Fundamental Materials Research, United States
Get access

Abstract

The thermoelectric properties of Pb9.6SbyTe10−xSex were investigated in the intermediate temperature range of 300 – 700 K. The effect of the variation of Sb content (y) on the electronic properties of the materials is remarkable. Samples with compositions Pb9.6Sb0.2Te10−xSex (y = 0.2) show the best combination of low thermal conductivity with moderate electrical conductivity and thermopower. For Pb9.6Sb0.2Te8Se2 (x = 2) a maximum figure of merit of ZT ∼ 1.1 was obtained around 700 K. This value is nearly 1.4 times higher than that of PbTe at 700 K. This enhancement of the figure of merit of Pb9.6Sb0.2Te8Se2 derives from its extremely low thermal conductivity (∼0.7 at W/m.K at 700 K). High resolution transmission electron microscopy of Pb9.6Sb0.2Te10−xSex samples shows broadly distributed Sb-rich nanocrystals, which may be the key feature responsible for the suppression of the thermal conductivity.

Type
Research Article
Copyright
Copyright © Materials Research Society 2006

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Kanatzidis, M. G., Semicond. Semimet. 69, 51100 (2000).Google Scholar
[2] Venkatasubramanian, R., Colpitts, T., Watko, E., Lamvik, M. and El-Masry, N., J. Cryst. Growth. 170, 817821 (1997).Google Scholar
[3] Harman, T. C., Spears, D. L. and Manfra, M. J., J. Electron. Mater. 25, 11211127 (1996).Google Scholar
[4] Aigle, M., et al. Phys. Rev. B, 64, 35316 (2001).Google Scholar
[5] Harman, T. C., Spears, D. L. and Walsh, M. P., J. Electron. Mater. 28, L1–L4 (1999).Google Scholar
[6] Harman, T. C., Taylor, P. J., Spears, D. L. and Walsh, M. P., 18th International conference on Thermoelectrics, 280284 (1999).Google Scholar
[7] Harman, T. C., Taylor, P. J., Walsh, M. P. and LaForge, B. E., Science, 297, 22292232 (2002).Google Scholar
[8] Dashevsky, Z. M., Dariel, P., and Shusterman, S., Semiconductor Physic, Quantum Electronics and Optoelectronics, 3, 181184 (2000).Google Scholar
[9] Orihashi, M., Noda, Y., Chen, L.-D., Goto, T. and Hirai, T., J. Phys. Chem. Solids, 61, 919923 (2000).Google Scholar
[10] Loo, S., Short, J., Hsu, K. -F., Kanatzidis, M. G. and Hogan, T., Mat. Res. Soc. Symp. Proc. 793, S9.4.19 (2004).Google Scholar
[11] Harman, T. C., Taylor, P. J., Spears, D. L. and Walsh, M. P., J. Electron. Mater. Lett. 29, L1–L4 (2000).Google Scholar
[12] Ioffe, A. F., Can. J. Phys. 34, 1342 (1956).Google Scholar
[13] Hsu, K. F., Loo, S., Guo, F., Chen, W., Dyck, J. S., Uher, C., Hogan, T., Polychroniadis, E. K. and Kanatzidis, M. G., Science, 303, 818821 (2004).Google Scholar
[14] (a) Khitun, A., Wang, K. L. and Chen, G., Nanotechnology, 11 (4), 327331 (2000);Google Scholar
(b) Quarez, E., et al. J. Am. Chem. Soc. 127, 91779190 (2005).Google Scholar