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Effects of Boron Implantation on Silicon Dioxide Passivated HgCdTe

Published online by Cambridge University Press:  25 February 2011

R. C. Bowman Jr ,
J. Marks ,
R. G. Downing ,
J. F. Knudsen  and
G. A. To
R. C. Bowman Jr
Affiliation:
The Aerospace Corporation, Laboratory Operations, P. O. Box 92957 Los Angeles, CA 90009
J. Marks
Affiliation:
The Aerospace Corporation, Laboratory Operations, P. O. Box 92957 Los Angeles, CA 90009
R. G. Downing
Affiliation:
Center for Analytical Chemistry, National Bureau of Standards, Gaithersburg, MD 20899
J. F. Knudsen
Affiliation:
The Aerospace Corporation, Laboratory Operations, P. O. Box 92957 Los Angeles, CA 90009
G. A. To
Affiliation:
The Aerospace Corporation, Laboratory Operations, P. O. Box 92957 Los Angeles, CA 90009
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Abstract

The influence of boron ion implants on the optical and physical properties of photochemically deposited SiO2 films on HgO 7 CdO 3Te and silicon has been investigated. The distributions of the boron atoms between the SiO2 film and substrate have been determined by a nondestructive neutron depth profiling method. The implants produce an apparent densification of the SiO2 films, which is accompanied by an increase in refractive index and changes in the infrared vibrational spectra for these films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 90: Symposium R – Materials for Infrared Detectors and Sources , 1986 , 279
Copyright
Copyright © Materials Research Society 1987

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References

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