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Effects of Carbon Concentration Upon Oxygen Precipitation in Cz Si

Published online by Cambridge University Press:  26 February 2011

S. Hahn ,
M. Arst ,
K. N. Ritz ,
S. Shatas ,
H. J. Stein ,
Z. U. Rek  and
W. A. Tiller
S. Hahn
Affiliation:
Siltec Silicon, Menlo Park, CA 94025
M. Arst
Affiliation:
Philips Research Laboratories - Sunnyvale, Signetics Co., Sunnyvale, CA 94088
K. N. Ritz
Affiliation:
Philips Research Laboratories - Sunnyvale, Signetics Co., Sunnyvale, CA 94088
S. Shatas
Affiliation:
Nanosil, Santa Clara, CA 95051
H. J. Stein
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185
Z. U. Rek
Affiliation:
Stanford University, Stanford, CA 94305
W. A. Tiller
Affiliation:
Stanford University, Stanford, CA 94305
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Abstract

Effects of high carbon concentration upon oxygen precipitate formation in Cz silicon have been investigated by combining various furnace and rapid thermal annneals. Even though oxide precipitate density increases with increasing carbon levels, Cs, synchrotron radiation section topographs of processed high carbon content wafers (Cs ∼ 4ppma) exhibit Pendellosung fringes, indicating a strain free bulk state. Our optical microscopic data have also shown very few defect etch features inside the bulk. A model based upon a direct coupling of both SiO2 and Si-C complex formation reactions is used to explain rather unique oxygen precipitation characteristics in the high carbon content Cz Si materials.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 104 , 1987 , 201
Copyright
Copyright © Materials Research Society 1988

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References

REFERENCES

1.Gosele, U., Materials Research Society Proceedings Volume 59 (1986) p. 419.Google Scholar
2.Hockett, R.S., Fraundorf, P.B., Reed, D.A., Wayne, D.H. and Fraundorf, G.K., Materials Research Society Proceedings Volume 59 (1986) p. 433.Google Scholar
3.Stein, H.J., Hahn, S. and Shatas, S.C., Materials Research Society Proceedings Volume 46 (1985) p. 269.Google Scholar
4.Hahn, S., Shatas, S.C. and Stein, H.J., Materials Research Society Proceedings Volume 59 (1986) p. 287.Google Scholar
5.Tiller, W. A., Hahn, S. and Ponce, F.A., J. Appl. Phys. 59 (1986) 3255.Google Scholar