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Effects of Electrically Active Impurities on the Epitaxial Regrowth Rate of Amorphized Silicon and Germanium

Published online by Cambridge University Press:  15 February 2011

I. Suni ,
G. Göltz ,
M.-A. Nicolet  and
S. S. Lau
I. Suni
Affiliation:
California Institute of Technology, Pasadena, CA 91125 (U.S.A.)
G. Göltz
Affiliation:
California Institute of Technology, Pasadena, CA 91125 (U.S.A.)
M.-A. Nicolet
Affiliation:
California Institute of Technology, Pasadena, CA 91125 (U.S.A.)
S. S. Lau
Affiliation:
University of California, San Diego, La Jolla, CA 92093 (U.S.A.)
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Extract

The influence of electrically active n-type (75As) and p-type (11B) impurities on the solid phase epitaxial regrowth of ion-implanted amorphized Si<100> and Ge<100> has been studied for low temperature furnace annealing. Both types of impurity increase the rate of regrowth of both silicon and germanium at a concentration level of 1020 cm−3 . Above this level, 75As retards regrowth in germanium. In compensated surface layers, the regrowth rate slows down to the values observed in self-implanted or intrinsic crystals for both silicon and germanium. The results can be qualitatively explained in terms of electrically induced generation of point defects at the amorphous-crystalline interface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 10: Symposium C – Thin Films and Interfaces I , 1981 , 175
Copyright
Copyright © Materials Research Society 1982

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References

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