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Effects of Fluorine on MOS Properties
Published online by Cambridge University Press: 03 September 2012
Abstract
The incorporation of small amounts of fluorine has been found to improve the properties of MOS devices. In this paper, some of these results will be reviewed, several techniques to introduce fluorine will be described, the distributions of F resulting from these processes will be shown, and the possible mechanisms leading to the improved MOS device reliability will be discussed.
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- Copyright © Materials Research Society 1992
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