Hostname: page-component-77c89778f8-swr86 Total loading time: 0 Render date: 2024-07-16T14:09:03.669Z Has data issue: false hasContentIssue false
  • English
  • Français

Effects Of Grain Boundaries on the Resistivity of Cosputtered Wsi2 Films

Published online by Cambridge University Press:  15 February 2011

D. R. Campbell ,
S. Mader  and
W. K. Chu
D. R. Campbell
Affiliation:
IBM Corporation, Route 52, Hopewell Junction, NY 12533 (U.S.A.)
S. Mader
Affiliation:
IBM Corporation, Route 52, Hopewell Junction, NY 12533 (U.S.A.)
W. K. Chu
Affiliation:
IBM Corporation, Route 52, Hopewell Junction, NY 12533 (U.S.A.)
Get access

Abstract

Resistivity and grain size measurements on thin films of co-sputtered WSi2 show that the resistivity in this material is dominated by grain boundary scattering. The reflection coefficient for the transport of charge carriers through the grain boundaries was determined to be approximately 0.9.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 10: Symposium C – Thin Films and Interfaces I , 1981 , 351
Copyright
Copyright © Materials Research Society 1982

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Zirinsky, S., Hammer, W., d'Heurle, F. M. and Baglin, J., Appl. Phys. Lett., 33 (1978) 76.Google Scholar
2 Crowder, B. L. and Zirinsky, S., IEEE J. Solid-State Circuits, 14 (1978) 76.Google Scholar
3 Geipel, H. J. Jr., Hsieh, N., Ishaq, M. H., Koburger, C. W. and White, F. R., IEEE Trans. Electron Devices, 27 (1980) 1417.Google Scholar
4 Miller, R. J., Thin Solid Films, 72 (1980) 427.CrossRefGoogle Scholar
5 Tsai, M. Y., d'Heurle, F. M., Peterson, C. S. and Johnson, R. W., J. Appl. Phys., 52 (1981) 5350.Google Scholar
6 Neshpor, V. S. and Samsonov, G. V., Fiz. Tverd. Tela, 2 (1960) 2202.Google Scholar
7 Murarka, S. P. and Fraser, D. B., J. Appl. Phys., 51 (1980) 1593.Google Scholar
8 Angillelo, J., Baglin, J. E. E., Cardone, F., Dempsey, J. J., d'Heurle, F. M., Irene, E. A., MacInnes, R., Peterson, C. S., Savoy, R., Segmuller, A. P. and Tierney, E., J. Electron. Mater., 10 (1980) 59.CrossRefGoogle Scholar
9 Mayadas, A. F. and Shatzkes, M., Phys. Rev. B, 1 (1970) 1382.Google Scholar
10 Riggoty, J., IBM Research, Yorktown Heights, NY, personal communication, 1979.Google Scholar
11 Sinha, A. K., J. Vac. Sci. Technol., 19 (1981) 778.Google Scholar
12 Ziman, J., Electrons and Phonons, Oxford University Press, London, 1960, p. 489.Google Scholar