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Effects of Minimizing the Driving Force for Epitaxy in the Ge/Si(001) System

Published online by Cambridge University Press:  15 February 2011

P. O. Hansson ,
E. Bauser ,
M. Albrecht  and
H. P. Strunk
P. O. Hansson
Affiliation:
Max-Planck-lnstitut fir Festkörperforschung, Heisenbergstrasse 1, D-W-7000 Stuttgart 80, Germany
E. Bauser
Affiliation:
Max-Planck-lnstitut fir Festkörperforschung, Heisenbergstrasse 1, D-W-7000 Stuttgart 80, Germany
M. Albrecht
Affiliation:
Universität Erlangen-Nürnberg, Institut für WerkstoffwissenschaftenVII, Cauerstrasse 6, D-W-8520 Erlangen, Germany
H. P. Strunk
Affiliation:
Universität Erlangen-Nürnberg, Institut für WerkstoffwissenschaftenVII, Cauerstrasse 6, D-W-8520 Erlangen, Germany
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Abstract

A new technique for Ge/Si heteroepitaxy from the solution, referred to as interfacial energy epitaxy, produces Ge layers with atomically abrupt interfaces to Si and permits monolayer-controlled growth at temperatures up to 937°C. The initial driving force for epitaxy comes from interfacial energy differences between Ge, Si, and the solvent or growth mediator, whose surface free energy has to be smaller than that of Ge. A superheating of the growth solution partly out-balances this driving force, which allows us to minimize the total driving force for epitaxy. Two-dimensional growth results. Subsequent faceting and pseudomorphic island growth manifest additional driving forces for epitaxy, which may be due to interfacial- and strain energy gain.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 312: Symposium P – Common Themes and Mechanisms of Epitaxial Growth , 1993 , 53
Copyright
Copyright © Materials Research Society 1993

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References

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