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Effects of Nonmelt Laser Annealing on a 5keV Boron Implant in Silicon

Published online by Cambridge University Press:  17 March 2011

Susan Earles ,
Mark Law ,
Kevin Jones ,
Rich Brindos  and
omit Talwar
Susan Earles
Affiliation:
SWAMP Center, University of Florida
Mark Law
Affiliation:
SWAMP Center, University of Florida
Kevin Jones
Affiliation:
SWAMP Center, University of Florida
Rich Brindos
Affiliation:
SWAMP Center, University of Florida
omit Talwar
Affiliation:
Verdant, San Jose CA
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Abstract

To investigate the effects of ramp rate on the transient enhanced diffusion of boron in silicon, laser thermal processing (LTP) in the nonmelt regime has been investigated. A nonmelt laser anneal has been performed on a 5 keV, 1e15 boron implant. The implant energy of 5keV was chosen to simplify analysis. A rapid thermal anneal (RTA) at 1000°C and furnace anneals at 750 °C were used to show the effect of post annealing on the LTPd samples. Results show the sheet resistance drops by up to a factor of two for samples receiving the nonmelt LTP and the RTA compared with the samples just receiving the RTA. An increase in the hall mobility was also observed for the samples receiving the LTP. The nonmelt LTP was also shown to strongly affect the extended defect density. During post anneals, a higher density of smaller defects evolved in the samples receiving the LTP.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 610: Symposium B – Si Front End Processing - Physics & Technology..II , 2000 , B10.5
Copyright
Copyright © Materials Research Society 2000

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References

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