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Effects of Poly-Si Annealing on Gate Oxide Charging Damage in Poly-Si Gate Etching Process
Published online by Cambridge University Press: 01 February 2011
Abstract
The effects of the poly-Si annealing on gate oxide charging damage in the gate etching process were investigated. Our electrical test results show that gate oxide charging damage can be reduced if the poly-Si is not annealed prior to the gate etching process.
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- Copyright © Materials Research Society 2002