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Effects of Rapid Thermal Processing on Thermal Oxides of Silicon#
Published online by Cambridge University Press: 28 February 2011
Abstract
The effects of rapid thermal processing (RTP) on the electrical properties of thin gate oxides in MOS devices have been studied. MOS capacitors have been analyzed by capacitance-voltage (C-V), current-voltage (I-V), and constant current stress techniques. MOSFET degradation due to hot carrier injection has also been investigated. No significant RTP-induced degradation was detected in any category of the device properties considered here. An abnormal trapping behavior was observed on the wafer annealed at 1100°C for 5 seconds.
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- Copyright © Materials Research Society 1986
Footnotes
This work was supported by Semiconductor Research Corporation under Contract 85-07-061 and Texas Advanced Technology Research Program.
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