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Effects of Rare Earth Incorporation on the Ferroelectric and Dielectric Properties of Sol-Gel Derived PbTiO3 Films

Published online by Cambridge University Press:  21 February 2011

G. Teowee
Affiliation:
Donnelly Corporation, 4545 E. Ft. Lowell Rd., Tucson, Arizona 85712
C.D. Baertlein
Affiliation:
Donnelly Corporation, 4545 E. Ft. Lowell Rd., Tucson, Arizona 85712
S.A. Schlegel
Affiliation:
Donnelly Corporation, 4545 E. Ft. Lowell Rd., Tucson, Arizona 85712
J.M. Boulton
Affiliation:
Arizona Materials Laboratories, Dept. of Materials Science and Engineering, University of Arizona, Tucson, Arizona 85712
D.R. Uhlmann
Affiliation:
Arizona Materials Laboratories, Dept. of Materials Science and Engineering, University of Arizona, Tucson, Arizona 85712
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Abstract

Ferroelectric (FE) films, especially PZT films, have received increasing attention for microelectronics applications such as FE memory and in high density DRAM's. While rare earth doped PbTiO3 ceramics has been studied for SAW and piezoelectric applications, rare earth-doped films seldom have been systematically explored. A series of sol-gel derived PbTiO3 films with varying amounts (5-15 mole %) of rare earths (such as, Nd, Sm, Tb, Dy, Er ,Yb and La ) have been prepared using acetates and alkoxides as precursors. The solutions were spin coated onto platinized Si wafers. The effects of the type and amount of rare incorporation on the phase assembly and microstructure have been quantified. The results of dielectric characterization (e.g., dielectric constant, dissipation factor and leakage currents) and FE behaviors (viz remanent polarization, and coercive field) are presented; these films exhibited low leakage currents (3E-10 A/cm2) and much higher dielectric constant (up to 525) compared to undoped PbTiO3 films.

Type
Research Article
Copyright
Copyright © Materials Research Society 1998

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References

REFERENCES

1 Jaffe, B., Cook, W.R. and Jaffe, H., Piezoelectric Ceramics. Acad. Press, NY 1971.Google Scholar
2 Scott, J.F., McMillan, L.D. and Araujo, C.A., Ferroelectrics 116, 147 (1991).Google Scholar
3 Hirata, K., Hosokawa, N., Hase, T., Sakuma, T. and Miyasaka, Y., Jpn. J. Appl. Phys. 31, 3021 (1992).Google Scholar
4 Teowee, G., Boulton, J.M. and Uhlmann, D.R.,, Mat. Res. Soc. Symp. Proc, 271, 345 (1992).Google Scholar
5 Teowee, G., Boulton, J.M., Baertlein, C.D., Wade, R.K. and Uhlmann, D.R., to be published in Integr. Ferroelectric, 1994.Google Scholar
6 Adachi, H., Mitsuyu, T., Yamazaki, O. and Wasa, K., Jpn. J. Appl. Phys., 24 (Suppl. 4-2), 287(1985).Google Scholar
7 Dey, S.K. and Lee, J., IEEE Trans. Electron Devices, 39, 1607 (1992).Google Scholar
8 Jyomura, S., Nagatsuma, K. and Takeuchi, H., J. Appl. Phys., 52, 4472 (1981).Google Scholar
9 Takeuchi, H., Jyomura, S., Yamamoto, E. and Ito, Y., J. Acoust. Soc. Am., 72, 1114 (1982).Google Scholar
10 CRC Handbook of Chemistry and Physics. 70th Edition. CRC Press, 1970.Google Scholar
11 Gururaja, T.R. and Subbarao, E.C., Ferroelectric, 23, 101 (1980).Google Scholar
12 Keizer, K. and Burggraaf, A.J., ibid, 14, 671 (1976).Google Scholar
13 Tandon, R.P., Singh, V. and Swann, N.R., J. Mater. Sei. Lett., 11, 327 (1992).Google Scholar
14 Duran, P., Fernandez, J.F., Recio, P., Capel, F. and Moure, C., Silic. Ind., 1990, 133.Google Scholar
15 Chang, J. and Desu, S.B., Ceram. Trans., 25, 155 (1990).Google Scholar
16 Yoon, S.G. and Kim, H.G., Ferroelectrics, 89, 91 ( 1989).Google Scholar
17 Kushida, K. and Takeuchi, H., Appl. Phys. Lett., 50, 1800 (1987).Google Scholar
18 Patel, A., Shorrocks, N.M. and Whatmore, R.W., IEEE Trans. Ultra., Ferroelectrics and Freq. Contr., 38, 372(1991).Google Scholar