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Effects of Reactive Sputtering Parameters on the Growth and Properties of Acoustooptic ZnO Films

Published online by Cambridge University Press:  25 February 2011

E. Jacobsohn  and
D. Shechtman
E. Jacobsohn
Affiliation:
Technion, Department of Materials Engineering, Haifa 32000, Israel
D. Shechtman
Affiliation:
Technion, Department of Materials Engineering, Haifa 32000, Israel
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Abstract

1 μm ZnO films were deposited on SiO2 by reactive sputtering using a D. C. magnetron gun. The microstructure, orientation and chemistry of the deposited layers were examined. It is shown that the oxygen partial pressure plays an important role in the structure of the layer through a mechanism of surface diffusion.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 242: Symposium G – Wide Band-Gap Semiconductors , 1992 , 779
Copyright
Copyright © Materials Research Society 1992

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References

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