Hostname: page-component-7bb8b95d7b-2h6rp Total loading time: 0 Render date: 2024-10-04T11:00:14.924Z Has data issue: false hasContentIssue false
  • English
  • Français

Effects of Sapphire Substrate Configurations on MBE Growth of ZnO

Published online by Cambridge University Press:  15 March 2011

Keiichiro Sakurai ,
Ken Nakahara ,
Tetsuhiro Tanabe ,
Shizuo Fujita  and
Shigeo Fujita
Keiichiro Sakurai
Affiliation:
Dept. of Electronic Sci. and Eng., Kyoto Univ, Sakyo, Kyoto, 606-8501, Japan
Ken Nakahara
Affiliation:
Optical Device Research and Development Div., Rohm Co., Ltd., Kyoto, 615-8585, Japan
Tetsuhiro Tanabe
Affiliation:
Optical Device Research and Development Div., Rohm Co., Ltd., Kyoto, 615-8585, Japan
Shizuo Fujita
Affiliation:
Optical Device Research and Development Div., Rohm Co., Ltd., Kyoto, 615-8585, Japan
Shigeo Fujita
Affiliation:
Optical Device Research and Development Div., Rohm Co., Ltd., Kyoto, 615-8585, Japan
Get access

Abstract

MBE growth of ZnO films for optical semiconductor devices was investigated on off-angled c-plane sapphire substrates. Twin crystal RHEED patterns and surface facetting observed with c-plane just-oriented substrates were suppressed by enlarging the offset angles from near-zero to 2.87 degrees. Though no significant changes were seen in optical characteristics, FWHM of XRC narrowed and surface morphology improved with larger offset angles, indicating that the offset angle is also a sensitive factor for ZnO film growth.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 587: Symposium O – Substrate Engineering - Paving the Way to Epitaxy , 1999 , O6.2
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Fons, P., Iwata, K., Niki, S., Yamada, A., Matsubara, K., J. Crystal Growth 201/202, 627 (1999).Google Scholar
[2] Ohnishi, T., Ohtomo, A., Kawasaki, M., Takahashi, K., Yoshimoto, M., Koinuma, H., Appl. Phys. Lett. 72, 824 (1998).Google Scholar
[3] Kang, H.B., Nakamura, K., Yoshida, K., Ishikawa, K., Jpn. J. Appl. Phys. 36 L933 (1997).Google Scholar
[4] Sakurai, K., Kanehiro, M., Nakahara, K., Tanabe, T., Fujita, Sz., Fujita, Sg., presented at the Intl. Conf. on Chemical Beam Epitaxy (Tsukuba, 1999), J. Crystal Growth (in press).Google Scholar