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Effects of Simulated X-Ray Lithography Exposures On Submicron-Channel Mosfets
Published online by Cambridge University Press: 15 February 2011
Abstract
Investigations of submicron-channel-length n- and p-channel MOSFETs subjected to channel hot-carrier stressing were performed, comparing the reliability of devices with and without exposure to simulated x-ray lithography processing steps. No significant differences were observed between the sample groups.
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- Copyright © Materials Research Society 1993
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