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Effects of Spacer Thickness on the Performance of InGaAs/GaAs Quantum Dot Lasers
Published online by Cambridge University Press: 17 March 2011
Abstract
It is found that the performance of self-assembled In0.5Ga0.5As/GaAs multi-stack quantum dot lasers is sensitive to the GaAs spacer thickness between the dots. Reducing the spacer thickness from 30 nm to 10 nm leads to narrow photoluminescence linewidth, low threshold current, high characteristic temperature and high internal quantum efficiency. This behavior is attributed to inhomogeneous broadening caused by dot size fluctuation related to spacer thickness.
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- Research Article
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- Copyright © Materials Research Society 2001