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The Effects of Thermal and Transient Annealing on the Redistribution of Indium Implanted Silicon

Published online by Cambridge University Press:  22 February 2011

W. Katz ,
G.A. Smith ,
R.F. Reihl  and
E.F. Koch
W. Katz
Affiliation:
General Electric Corporate Research and Development P.O. Box 8 Schenectady, NY 12301
G.A. Smith
Affiliation:
General Electric Corporate Research and Development P.O. Box 8 Schenectady, NY 12301
R.F. Reihl
Affiliation:
General Electric Corporate Research and Development P.O. Box 8 Schenectady, NY 12301
E.F. Koch
Affiliation:
General Electric Corporate Research and Development P.O. Box 8 Schenectady, NY 12301
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Abstract

The redistribution of indium in silicon has been studied as a function of dose during rapid thermal annealing. The results show little redistribution of indium for doses 1×1015 cm−2. For a 350keV/5×1015 cm−2 indium implant, the annealed sample showed significant indium precipitation and near surface defects. These data are contrasted to an earlier study of a 300keV/1×1015 cm−2 indium implanted silicon sample that was furnace annealed for 30 minutes at 1050°C. The furance annealed sample showed redistribution to both implant damage and the amorphous crystalline interface as well as a tail on the backside of the implant due to interstitial diffusion. This interstitial tail is clearly minimized in the transient annealed sample.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 23 , 1983 , 299
Copyright
Copyright © Materials Research Society 1984

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References

REFERENCES

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