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Effects of Tisix/Tinx/Al Contact Metallization Process on the Shallow Junction Related Properties

Published online by Cambridge University Press:  28 February 2011

S.W. Sun ,
F. Pintchovski ,
P.J. Tobin  and
R.L. Hance
S.W. Sun
Affiliation:
Advanced Products Research and Development Laboratory
F. Pintchovski
Affiliation:
Advanced Products Research and Development Laboratory
P.J. Tobin
Affiliation:
Advanced Products Research and Development Laboratory
R.L. Hance
Affiliation:
Reliability and Quality Assurance LaboratoryMotorola Inc., Austin, Texas 78721
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Abstract

An extremely reliable TiSix/TiNx diffusion barrier was formed by the rapid thermal annealing of a thin Ti layer which was sputtered into the contacts before Al metallization. The effects of this barrier metal process on the material properties of heavily implanted n+ and p+ regions were studied. The TiNx-to-TiSix thickness ratio is determined by the dominant reaction at the sintering temperature. Arsenic implanted in the substrate tends to substantially retard the silicidation of Ti. Substantial redistribution of both B and As across the silicide layer was observed during rapid thermal annealing. Film stress was found to be greatly affected by the annealing temperature. Contact resistance, contact electromigration and thermal stability of the structure were also investigated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 92: Symposium B – Rapid Thermal Processing of Electronic Materials , 1987 , 165
Copyright
Copyright © Materials Research Society 1987

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References

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