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Electric field effect in amorphous semiconductor films assembled from transition-metal-encapsulating Si clusters

Published online by Cambridge University Press:  10 August 2011

N. Uchida ,
T. Miyazaki ,
Y. Matsushita ,
K. Sameshima  and
T. Kanayama
N. Uchida
Affiliation:
Nanodevice Innovation Research Center, National Institute of Advanced Industrial Science and Technology, 1-1-1 Higashi, Tsukuba, Ibaraki 305-8562, Japan
T. Miyazaki
Affiliation:
Nanosystem Research Institute, National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
Y. Matsushita
Affiliation:
Nanodevice Innovation Research Center, National Institute of Advanced Industrial Science and Technology, 1-1-1 Higashi, Tsukuba, Ibaraki 305-8562, Japan Institute of Applied Physics and Doctoral Program in Applied Physics, University of Tsukuba, 1-1-1 Tenoudai, Tsukuba, Ibaraki 305-8573, Japan
K. Sameshima
Affiliation:
Nanodevice Innovation Research Center, National Institute of Advanced Industrial Science and Technology, 1-1-1 Higashi, Tsukuba, Ibaraki 305-8562, Japan Institute of Applied Physics and Doctoral Program in Applied Physics, University of Tsukuba, 1-1-1 Tenoudai, Tsukuba, Ibaraki 305-8573, Japan
T. Kanayama
Affiliation:
Institute of Applied Physics and Doctoral Program in Applied Physics, University of Tsukuba, 1-1-1 Tenoudai, Tsukuba, Ibaraki 305-8573, Japan National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
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Abstract

We synthesized amorphous semiconductor films composed of Mo-encapsulating Si clusters (MoSin : n∼10) on solid substrates. The MoSi10 films had Si networks similar to hydrogenated amorphous Si and an optical gap of 1.5 eV. Electron spin resonance signals were not observed in the films indicating that dangling bonds of Si were terminated by Mo atoms. We fabricated thin-film-transistors using the MoSi10 film as a channel material. The electric field effect of the film was clearly observed. This suggests that the density of mid-gap states in the film is low enough for the field effect to occur.

Keywords

cluster assemblythin filmlaser ablation
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1321: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology , 2011 , mrss11-1321-a18-04
Copyright
Copyright © Materials Research Society 2011

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References

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