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Electrical and Optical Properties of Co Alloyed β-FeSi2 Formed by Ion Beam Synthesis
Published online by Cambridge University Press: 03 September 2012
Abstract
By subsequent implantation of iron and cobalt into silicon buried layers of semiconductinβ-(Fe1−xCox)Si2 are formed. The band gap energy as well as the spreading resistance decrease with increasing cobalt content. The microstructure of the sulicide layers is characterized by XTFM images.
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- Copyright © Materials Research Society 1994