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Electrical and Optical PROPERTIES OF Co ALLOYED ß-FeSi2 Formed by Ion Beam Synthesis
Published online by Cambridge University Press: 22 February 2011
Abstract
By subsequent implantation of iron and cobalt into silicon buried layers of semiconducting ß-(Fe1-xCo1-x)Si2 are formed. The band gap energy as well as the spreading resistance decrease with increasing cobalt content. The microstructure of the suicide layers is characterized by XTEM images.
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- Copyright © Materials Research Society 1994
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