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Electrical and Optical Properties of Heterostructures Made from Diamond-Like Carbon Layers on Crystalline Silicon

Published online by Cambridge University Press:  25 February 2011

Albert Hammerschmidt
Affiliation:
Siemens Corporate Research and Development, Paul-Gossen-Str. 100, D-8520 Erlangen, Federal Republic of, Germany
Th. Mandel
Affiliation:
Institute of Applied Physics, University of Erlangen, Staudt-Str. 7, D-8520 Erlangen, Federal Republic of, Germany
R. Helbig
Affiliation:
Institute of Applied Physics, University of Erlangen, Staudt-Str. 7, D-8520 Erlangen, Federal Republic of, Germany
S. Birkle
Affiliation:
Siemens Corporate Research and Development, Paul-Gossen-Str. 100, D-8520 Erlangen, Federal Republic of, Germany
J. Kammermaier
Affiliation:
Siemens Corporate Research and Development, Paul-Gossen-Str. 100, D-8520 Erlangen, Federal Republic of, Germany
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Abstract

Thin films of amorphous, diamond-like carbon (DLC) were deposited on crystalline silicon substrates in a capacitively coupled RF-plasma discharge. The investigations concentrated on I-V and C-V measurements, on photoconductivity and on optical transmission between wavelengths of 2 and 50 microns of the heterostructure DLC/Si. The photoconductivity of the heterostructure is investigated for the first time; it depends on the band gap of the film, the thickness and the doping of the substrate. The DLC/Si heterostructure works like a MIS-photoelectric cell.

Type
Research Article
Copyright
Copyright © Materials Research Society 1992

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References

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