Hostname: page-component-84b7d79bbc-g78kv Total loading time: 0 Render date: 2024-07-26T18:53:06.039Z Has data issue: false hasContentIssue false
  • English
  • Français

Electrical Characterization of Beam—Recrystallized Soi Structures Using a Depletion Mode Transistor

Published online by Cambridge University Press:  28 February 2011

D.P. Vu ,
A. Chantre ,
D. Ronzani  and
J.C. Pfister
D.P. Vu
Affiliation:
Centre National d'Etudes des Téléommunications — Chemin du Vieux Chêne — B.P.: 98 – 38243 Meylan Cédex—France
A. Chantre
Affiliation:
Centre National d'Etudes des Téléommunications — Chemin du Vieux Chêne — B.P.: 98 – 38243 Meylan Cédex—France
D. Ronzani
Affiliation:
Centre National d'Etudes des Téléommunications — Chemin du Vieux Chêne — B.P.: 98 – 38243 Meylan Cédex—France
J.C. Pfister
Affiliation:
Centre National d'Etudes des Téléommunications — Chemin du Vieux Chêne — B.P.: 98 – 38243 Meylan Cédex—France
Get access

Abstract

We show that a depletion mode transistor is a very versatile tool for the electrical characterization of SOI structures. We apply it to Si thin films recrystallized by a zone—melting technique in which grainboundaries are localized. Apart from the transportparameters, one can get from drain—source current the information usually determined from a MOS capacitor. Owing to the existence in such a transistor of two MOS structures, we are able to characterize both Si-SiO2 interfaces as well as the “bulk” of the Si film.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 53 , 1985 , 357
Copyright
Copyright © Materials Research Society 1986

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Footnotes

*

Present address: AT&T Bell Laboratories, Murray Hill NJ 07974 – U.S.A.

**

Deceased.

References

Referiences

[1] Haond, M., Dutartre, O. and D. Bensahel: paper presented at the Materials Research Society Europe 1985, Strasbourg, May 13-15, 1985.Google Scholar
[21 Colinge, J.P., Demoulin, E., Bensahel, D. and Auvert, G.: Appl. Phys. Lett. 41, 346 (1982).Google Scholar
[3] Schroder, D.K. and Guldberg, J.: Solid State Electron. 14, 1285 (1971).Google Scholar
[4) Vu, D.P. and Pfister, J.C.: Appl. Phys. Lett. 47, 950 (1985).Google Scholar
[5] Vu, D.P. and Pfister, J.C.: Appl. Phys. Lett. (January 1986).Google Scholar
[6] Kamins, T.I., Lee, K.F. and Gibbons, J.F.: IEEE Trans. Electron. Device Lett. EDL–1, 5 (1980).Google Scholar
[7] Vu, D.P., Chantre, A., Mingam, H. and Vincent, G.: J. Appl. Phys. 56, 1682 (1984).Google Scholar
[8] Collet, J.M.: Solid State Electronics, 18, 1077 (1975).Google Scholar
[9] Ronzanf, D., Vu, D.P., Haond, M. and Chantre, A.: paper presented at the Materials Research Society Europe, Strasbourg, May 13-15 (1985).Google Scholar