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Electrical Defect Analysis Following Pulsed Laserirradiation of Unimplanted GaAs

Published online by Cambridge University Press:  15 February 2011

D. Pribat ,
S. Delage ,
D. Dieumegard ,
M. Croset ,
P.C. Srivastava  and
J.C. Bourgoin
D. Pribat
Affiliation:
Thomson-CSF/LCR, Domaine de Corbeville, 91401 Orsay, France.
S. Delage
Affiliation:
Thomson-CSF/LCR, Domaine de Corbeville, 91401 Orsay, France.
D. Dieumegard
Affiliation:
Thomson-CSF/LCR, Domaine de Corbeville, 91401 Orsay, France.
M. Croset
Affiliation:
Thomson-CSF/LCR, Domaine de Corbeville, 91401 Orsay, France.
P.C. Srivastava
Affiliation:
Groupe de Physique des Solides de I'E.N.S. Université Paris VII, Tour 23, 2 Place Jussieu, 75221 Paris, France.
J.C. Bourgoin
Affiliation:
Groupe de Physique des Solides de I'E.N.S. Université Paris VII, Tour 23, 2 Place Jussieu, 75221 Paris, France.
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Abstract

Current-voltage, capacitance-voltage and defect spectroscopy techniques are used to characterize the electrical properties of GaAs crystals after pulsed laser irradiation with either a Nd-YAG or a Ruby laser. I(V) and C(V) measurements performed in conjunction on Au/GaAs Schottky structures after laser irradiation at low energy density show an important barrier lowering, of the order of 300mV. Carrier compensation up to 6×lO16/cm3 is observed in a subsurface layer whose thickness increases with deposited laser energy density. D.L.T.S. is used to study the tail of laser induced defects behind the heavily compensated layer. Finally the results are compared to those obtained following conventional thermal treatment.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 13 , 1982 , 647
Copyright
Copyright © Materials Research Society 1983

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Footnotes

*

Work partially supported by D.R.E.T.

References

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