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Electrical Measurement of Recombination Lifetime in Blue Light Emitting Diodes

Published online by Cambridge University Press:  26 February 2011

M. A. Awaah ,
R. Nana  and
K. Das
M. A. Awaah
Affiliation:
Department of Electrical Engineering, Tuskegee University, Tuskegee AL 36088
R. Nana
Affiliation:
Department of Biomedical Engineering, Georgia Institute of Technology, Atlanta, GA. 30332
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Abstract

A recombination lifetime of approximately 25 ns was extracted from measured reverse recovery storage times in AlGaN/GaN/AlGaN double heterojunction blue light emitting diodes. This experimentally determined lifetime is expected to arise from a combination of radiative and non-radiative processes occurring in the diodes. The non-radiative processes are likely to be due the presence of a high concentration deep-states as identified from the current-voltage and capacitance-voltage measurements. Current-voltage characteristics of these diodes were highly non-ideal as indicated by high values of the ideality factor ranging from 3.0 – 7.0. Logarithmic plots of the forward characteristics indicated a space-charge-limited-current (SCLC) conduction in presence of a high density of “deep-level states” in the active region of the diodes. An analysis of these characteristics yielded an approximate density of these deep-level states as 2 × 1017/cm3. The density of deep-states extracted from capacitance-voltage measurements were in good agreement with that obtained from current-voltage measurements.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 829: Symposium B – Progress in Compound Semiconductor Materials IV – Electronic and Optoelectronic Applications , 2004 , B2.11
Copyright
Copyright © Materials Research Society 2005

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References

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