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The Electrical Properties of In-situ Doped Polycrystalline Silicon Thin Films Grown by Electron Cyclotron Resonance Chemical Vapor Deposition at 250°C

Published online by Cambridge University Press:  10 February 2011

Yeu-Long Jiang ,
Ruo-Yu Wang ,
Huey-Liang Hwang  and
Tri-Rung Yew
Yeu-Long Jiang
Affiliation:
Department of Electrical Engineering, National Chung Hsing University, Taichung, Taiwan
Ruo-Yu Wang
Affiliation:
Department of Electrical Engineering, National Tsing Hua University, Hsin-Chu, Taiwan
Huey-Liang Hwang
Affiliation:
Department of Electrical Engineering, National Tsing Hua University, Hsin-Chu, Taiwan
Tri-Rung Yew
Affiliation:
Center of Materials Research, National Tsing Hua University, Hsin-chu, Taiwan
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Abstract

The phosphorus doped polycrystalline silicon thin films were grown by Electron Cyclotron Resonance Chemical Vapor Deposition (ECR-CVD) at 250°C. The doping gas PH3 was in-situ added with SiH4 gas during the films deposition. All films were deposited with 90% hydrogen dilution ratio. The resistivity of the films is varied from 0.2 to 7Ω-cm and decrease as the PH3/SiH4 gas ratio increase from (3/100 to 7/100). From the SIMS data, the doping concentration is all about 1020cm-3. The activation energy is decreased from 0.35 eV to 0.12 eV as the dopant concentration increased from 0.8×10 20cm-3 to 4.7×10 20cm-3. From the Hall measurements, the carrier mobility is about 2∼4 cm2/V. sec, and the carrier concentration is the 0.5∼1% of the dopant concentration. The gain boundary trap density predicted by the trapping model is about 4×l013cm” 2-2

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 472: Symposium I – Polycrystalline Thin Films - Structure, Texture, Properties..III , 1997 , 451
Copyright
Copyright © Materials Research Society 1997

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References

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