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Electrical Properties Of S+ Implantation in Si GaAs

Published online by Cambridge University Press:  26 February 2011

Guanqun Xia ,
Anmin Guan ,
Haiyang Geng  and
Weiyuan Wang
Guanqun Xia
Affiliation:
Shanghai Institute of Metallurgy, Academia Sinica Shanghai 200050, China
Anmin Guan
Affiliation:
Shanghai Institute of Metallurgy, Academia Sinica Shanghai 200050, China
Haiyang Geng
Affiliation:
Shanghai Institute of Metallurgy, Academia Sinica Shanghai 200050, China
Weiyuan Wang
Affiliation:
Shanghai Institute of Metallurgy, Academia Sinica Shanghai 200050, China
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Abstract

The electrical properties of S+ implanted in SI GaAs have been studied. The rapid diffusion and redistribution of S+ implanted in GaAs after conventional thermal annealing (CTA) depends not on conventional diffusion of S+ or VAs, but on the enhanced diffusion by ion implantation. By employing rapid thermal annealing (RTA) techniques enhanced diffusion can be restrained, redistribution of S+ implantation can be decreased greatly and a thin active layer suitable for fabricating GaAs MESFET devices can be obtained.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 209: Symposium K – Defects in Materials , 1990 , 499
Copyright
Copyright © Materials Research Society 1991

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References

REFERENCES

[1] Hemment, P.L., et al. , in Ion Implantation in Semiconductors Science and Technology, Ed. by Namba, S. (1974) 27.Google Scholar
[2] Fan, Wei Dong, et al. , 1986 GaAs & Related Compounds Symp.(1987) 277.Google Scholar
[3] Yeo, Y.K., et al. , J. Appl. Phys., 53, 1812 (1982).CrossRefGoogle Scholar
[4] Williams, E.W., Phys. Rev., 168, 922 (1968).Google Scholar
[5] Oskima, M., et al. , J. Electrochem. Soc., 131, 130 (1984).Google Scholar
[6] Yin, S.Y., et al. , J. Appl. Phys., 54, 360 (1983).Google Scholar
[7] Klein, P.B., et al. , J. Appl. Phys., 51, 486 (1980).Google Scholar
[8] Goldstein, B., Phys. Rev., 121 (1961) 1305.Google Scholar
[9] Jin Sheng, Luo, Ion Implantation Physics, Shanghai, (1984)69.Google Scholar
[10] Chiang, S.Y., et al. , J. Appl. Phys., 46, 2986 (1975).CrossRefGoogle Scholar
[11] Chu, A., et al. , Ion Implantation in Semiconductors 1976, Plenum Press, New York, Chernow, F. Ed. (1977) 711.Google Scholar