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Electrode Structures for Integration of Ferroelectric or High Dielectric Constant Films in Semiconductor Devices

Published online by Cambridge University Press:  10 February 2011

Alfred Grill
Alfred Grill*
Affiliation:
IBM Research Division, T.J.Watson Research Center, Yorktown Heights, NY 10598
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Abstract

The preparation of ferroelectric and high-dielectric perovskite materials, which is performed at high temperatures in oxidizing environments, imposes strong limitations on the choice of suitable electrode materials which can be used for integration of these materials with semiconductor devices. Because of the complex compositions of the perovskites and of some of the electrode materials the two can interact and result in the deterioration of the structures. The electrode materials have, therefore, to be used often in combination with suitable barriers which block diffusion of the elements of the perovskite and of the Si device and prevent interactions between the components. These requirements can result in complex, multilayered electrode/barrier structures that can affect the crystallization of the perovskite material and its electrical properties as well as the perovskite properties during subsequent processing steps (e.g. in forming gas anneals). The present paper will review the different electrode/barrier structures that have been proposed for integration of ferroelectric thin films with semiconductor devices and discuss their effects on the properties of ferroelectric and high-dielectric materials.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 541: Symposium O – Ferroelectric Thin Films VII , 1998 , 89
Copyright
Copyright © Materials Research Society 1999

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References

REFERENCES

1. Grill, A., Kane, W., Viggiano, J., Brady, M., and Laibowitz, R., J.Mater.Res. 7, 3260 (1992).Google Scholar
2. Summerfelt, S.R., in Thin Film Ferroelectric Materials and Devices, Ramesh, R., editor, (Kluwer Academic Publishers, Boston, 1997), p. 1.Google Scholar
3. Saenger, K.L., Grill, A., and Cabral, C. Jr J.Mat.Res. 13, 462 (1998).Google Scholar
4. Dietz, G.W., Antpohler, W., Klee, M., and Wasser, R., J.Appl.Phys. 78, 6113 (1995).Google Scholar
5. Sun, S.C. and Tsai, M.S., IEDM 97 253 (1997).Google Scholar
6. Onishi, S., Nagata, M., Mitarai, S., Ito, Y., Kudo, J., Sakiyama, K., Desu, S.B., Bhatt, H.D., Vijay, D.P., and Hwang, Y., Journal of the Electrochemical Society 145, 2563 (1998).Google Scholar
7. Aoki, K., Fukuda, Y., Numata, K., and Nishimura, A., Jpn.J.Appl.Phys. 34, 5250 (1995).Google Scholar
8. Desu, S.B. and Yoo, I.K., Integr. Ferroelectr. 2, 363 (1993).Google Scholar
9. Aoki, K., Fukuda, Y., Numata, K., and Nishimura, A., IEICE Trans.Electron.(Japan) E81–C, 537 (1998).Google Scholar
10. AI-Shareef, H.N., Auciello, O., and Kingon, A.I., J.Appl.Ph ys. 77, 2146 (1995).Google Scholar
11. Jeon, M.S., Lee, J.B., and Choi, D., Jap.J.Appl.Phys.Part 137, 3391 (1998).Google Scholar
12. Kim, S., Hong, J.G., Gunter, J.C., Lee, H.Y., Streiffer, S.K., and Kingon, A.I., Mat.Res.Soc.Proc. 493, 131 (1998).Google Scholar
13. Nakamura, T., Nakao, Y., Kamisawa, A., and Takasu, H., Appl.Phys.Lett. 65, 1522 (1994).Google Scholar
14. Izumi, N., Fujimori, Y., Nakamura, T., and Kamisawa, A., IEICE Trans.Electron.(Japan) E81–C, 513 (1998).Google Scholar
15. Shimizu, M. and Shiosaki, T., Mat.Res.Soc.Proc. 361, 295 (1995).Google Scholar
16. Shimizu, M., Fujisawa, H., Hyodo, S., Nakashima, S., and Niu, H., Mat.Res.Soc.Proc. 493, 159 (1998).Google Scholar
17. Tuttle, B.A., Al-Shareef, H.N., Warren, W.L., Raymond, M.V., Headley, T.J., Voight, J.A., and Evans, J., Mat.Res.Soc.Symp.Proc. 433, 159 (1996).Google Scholar
18. Raymond, M.V., Al-Shareef, H.N., Tuttle, B.A., Dimos, D., and Evans, J., Mat.Res.Soc.Symp.Proc. 433, 159 (1996).Google Scholar
19. Lin, C.H., Yen, B.M., Chen, H., Wu, T.B., Kuo, H.C., and Stillman, G.E., Mat.Res.Soc.Symp.Proc. 493, 189 (1998).Google Scholar
20. Fujisaki, Y., Abdelghafar, K. Kushida, Miki, H., and Shimamoto, Y., IEICE Trans. Electron. (Japan) E81–C, 518 (1998).Google Scholar
21. Abdelghafar, K. Kushida and Fujisaki, Y., Jap.J.Appl.Phvs.Part 2 - Letters 37, PL804 (1998).Google Scholar
22. Thomas, D.T., Fujimura, N., Streiffer, S.K., and Kingon, A.I., Mat.Res.Soc.Syinp.Proc. 493, 153 (1998).Google Scholar
23. Saenger, K.L., Grill, A., and Shaw, T., Mat.Res.Soc.Symp.Proc. in press (1999).Google Scholar
24. Okada, Y., Koiwa, I., Ashikaga, K., and Kaifu, K., IEICE Trans.Electron.(Japan) E81–C, 560 (1998).Google Scholar
25. Jung, S.W., Bang, I., Lee, J., and Kim, J., Mat.Res.Soc.Proc. 493, 201 (1998).Google Scholar
26. Zafar, Z., Kaushik, V., Laberge, P., Chu, P., Jones, R.E., Hance, R.L., Zurcher, P., White, B.E., Taylor, D., Melnick, B. et al. J.Appl.Phys. 82, 4469 (1997).Google Scholar
27. Kanehara, T., Koiwa, I., Okada, Y., Ashikaga, K., Katoh, H., and Kaifu, K., IEDM 97 601 (1997).Google Scholar
28. Cha, S.Y., Jang, B., Kwak, D., Shin, C.H., and Lee, H.C., Integrated Ferroelectrics 17, 187 (1997).Google Scholar
29. Kotecki, D.E., Mat.Res.Soc.Symp.Proc. in press (1999).Google Scholar
30. Ahn, J., Park, J., Lee, W.L., and Kim, H., Mat.Res.Soc.Proc. 493, 87 (1998).Google Scholar
31. Grill, A. and Cabral, C. Jr Al-Ta bilayer as oxidation resistant barrier, J. Mater. Res., in press, (1998).Google Scholar
32. Summerfelt, S.R., US Patent 5,504,041, Apr.02 1996.Google Scholar
33. Hara, T., Tanaka, M., Sakiyama, K., Onishi, S., Ishihara, K., and Kudo, J., Jpn.J.Appl.Phys. 36, L893 (1997).Google Scholar
34. Agnello, P.D., Cabral, C. Jr, Grill, A., Jahnes, C., Licata, T. T., and Roy, A.R., US Patent 5,576,579, Nov. 16 1996, (date filed: Jan. 12 1995).Google Scholar
35. Grill, A., Jahnes, C., and Cabral, C. Jr Layered TaSiN as an oxydation resistant electrically conductive barrier, J. Mater. Res., in press, (1998).Google Scholar
36. Kudo, J., Ito, S., Mitarai, S., Ogata, N., Yamazaki, S., Urashima, H., Okutoh, A., Nagata, M., and Ishihara, K., IEDM 97 609 (1997).Google Scholar
37. Kotecki, D.E., Baniecki, J.D., Laibowitz, R., Saenger, K.L., Shaw, T.M., Shen, H., Athavale, S., Cabral, C. Jr, Duncombe, P., Gutsche, M. et al. IBM J.Res.Dev. in press (1998).Google Scholar
38. Saenger, K.L., Grill, A., and Kotecki, D.E., J.Appl.Phyvs. 83, 802 (1998).Google Scholar