Hostname: page-component-84b7d79bbc-5lx2p Total loading time: 0 Render date: 2024-07-26T19:24:35.319Z Has data issue: false hasContentIssue false
  • English
  • Français

Electroluminescence from Gunn Domains in GaAs MESFETS as a Means of Defect Detection

Published online by Cambridge University Press:  16 February 2011

Hans P. Zappe  and
Wolfgang Jantz
Hans P. Zappe
Affiliation:
Fraunhofer Institut für Angewandte Festkörperphysik, Eckerstraße 4 7800 Freiburg, West Germany
Wolfgang Jantz
Affiliation:
Fraunhofer Institut für Angewandte Festkörperphysik, Eckerstraße 4 7800 Freiburg, West Germany
Get access

Abstract

The emission of visible light from the high-field region near the drain of GaAs/AlGaAs MESFETs has been used to study the quality of fabricated transistors. Inhomogeneities or bright spots in the emission have proven to indicate the presence of defects in the gate/drain spacing or surface contaminants, such as re-deposited gate material. Processing abnormalities of 0.5 μm diameter are easily seen. The time-variation of emission from the brightest spots is characteristic of the formation of microplasmas the location of which will often predict the site of destructive device breakdown.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 184: Symposium F – Degradation Mechanisms in III-V Compound Semiconductor Devices and Structures , 1990 , 33
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Newman, R., Phys. Rev., 100(2), 700 (1955)10.1103/PhysRev.100.700Google Scholar
[2] Chynoweth, A.G. and Gummel, H.K., J. Phys. Chem. Solids 16, 191 (1960)10.1016/0022-3697(60)90149-9Google Scholar
[3] Michel, A.E., Nathan, M.I., Marinace, J.C., J. Appl. Phys, 35(12), 3543 (1964)10.1063/1.1713267Google Scholar
[4] Herzog, M. and Koch, F., Appl. Phys. Lett. 53(26), 2620 (1988)10.1063/1.100177Google Scholar
[5] Snow, E.S., Kirchoefer, S.W., Campbell, P.M. and Glembocki, O.J., Appl. Phys. Lett., 54(21), 2124 (1989)10.1063/1.101147Google Scholar
[6] Chen, J., Dao, G.B., Huang, D., Chyi, J.I., Ünlü, M.S. and Morkoç, H., Appl. Phys. Lett. 55(4), 374 (1989)10.1063/1.101875Google Scholar
[7] Chynoweth, A.G. and McKay, K.G., Phys. Rev., 102(2), 369 (1956)10.1103/PhysRev.102.369Google Scholar
[8] Rose, D.J., Phys. Rev., 105(2), 413 (1957)10.1103/PhysRev.105.413Google Scholar
[9] Goetzberger, A., Festkörperprobleme III, 209 (1963)Google Scholar
[10] Zappe, H.P. and Moglestue, C., to be publishedGoogle Scholar
[11] Wolff, P.A., J. Phys. Chem. Solids 16, 184 (1960)10.1016/0022-3697(60)90148-7Google Scholar
[12] Figielski, T. and Torun, A., Proc. of the Intl. Conf. on the Physics of Semiconductors, Exeter (1962)Google Scholar
[13] Zappe, H.P. and As, D., to be publishedGoogle Scholar
[14] Shockley, W., Solid State Elec., 2(1), 35 (1961)10.1016/0038-1101(61)90054-5Google Scholar