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Electromigration Behavior of Aluminum Films Deposited by Partially Ionized Beam.
Published online by Cambridge University Press: 22 February 2011
Abstract
Aluminum films deposited by partially»ionized beam were stressed by a current density of 2×106 A/cm2 at a temperature of 300°C. The films prepared at the acceleration voltage of 5 kV lived over 200 hours.
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- Copyright © Materials Research Society 1992