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Electromigration Induced Failure as a Function of Via Interface

Published online by Cambridge University Press:  10 February 2011

Larisa Kisselgof  and
J. R. Lloyd
Larisa Kisselgof
Affiliation:
Digital Equipment Corporation, 75 Reed Road Hudson MA 01749, kisselgof@bigq.enet.dec.com
J. R. Lloyd
Affiliation:
Lloyd Technology Associates, Inc., Box 194, Stow MA 01775, jlloyd@lta.ultranet.com
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Abstract

Failure of test structures composed of pairs of W vias connected by lengths of Al/0.5%Cu conductor were compared as a function of the position of the via with respect to the conductor link. In one configuration, the current was passed from first level to a conductor link on second level and in the other the current was passed from second level to one on the first. In each case the links were identical in cross section, length and composition. There was a significant difference in the performance with respect to electromigration lifetime between these configurations as well as a difference in the failure mode. In the first level links, where the current passed first through a a 350A thick TiN ARC (Anti-Reflective Coating) layer and then a 150A Ti layer, the lifetime was significantly shorter than that of the second level samples where the current was passed across an interface of Al3Ti intermetallic compound. In addition, the failure mode was different, the first metal links failing directly under the via whereas in second metal link, the failures were away from the via in the metal link itself.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 473: Symposium J – Materials Reliability in Microelectronics VII , 1997 , 401
Copyright
Copyright © Materials Research Society 1997

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References

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