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Electron Beam Enhanced Precipitation in Highly Carbon Doped GaAs Layers

Published online by Cambridge University Press:  03 September 2012

P. Werner ,
U. Gösele  and
H. Kohda
P. Werner
Affiliation:
MPI für Mikrostrukturphysik, Weinberg 2, D-06120 Halle / Saale, Germany
U. Gösele
Affiliation:
MPI für Mikrostrukturphysik, Weinberg 2, D-06120 Halle / Saale, Germany
H. Kohda
Affiliation:
NTT, LSI Laboratories Atsugi-shi, 243-01, Japan
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Abstract

Highly carbon doped GaAs layers grown by metal organic vapor phase epitaxy (MOVPE) have been investigated by transmission electron microscopy (TEM). Electron irradiation has been applied to generate point defects interacting with native defects, e.g., substitutional carbon. This irradiation induces periodically arranged striations perpendicular to the growth direction, which were observed in situ by TEM. Furthermore, precipitates (Ø= 10–15nm) were formed containing non-crystalline material, which most likely is gallium. To explain these phenomena a precipitation mechanism is proposed. It involves small fluctuations of the incorporated C as well as the interaction of irradiation induced point defects, mainly As and C interstitials and As vacancies.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 438: Symposium A – Materials Modificaton and Synthesis by Ion Beam… , 1996 , 205
Copyright
Copyright © Materials Research Society 1997

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