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Electron Transport Properties of InN

Published online by Cambridge University Press:  01 February 2011

Rebecca E. Jones ,
Henricus C. M. van Genuchten ,
Sonny X. Li ,
Leon Hsu ,
Kin Man Yu ,
Wladek Walukiewicz ,
Joel W. Ager III ,
Eugene E. Haller ,
Hai Lu  and
William J. Schaff
Rebecca E. Jones
Affiliation:
beccaj@berkeley.edu, University of California-Berkeley, Materials Science, 1 Cyclotron Road, MS 02R200, Berkeley, CA, 94720, United States
Henricus C. M. van Genuchten
Affiliation:
HCMvanGenuchten@lbl.gov, Lawrence Berkeley National Laboratory, Materials Sciences Division
Sonny X. Li
Affiliation:
xli@lbl.gov
Leon Hsu
Affiliation:
lhsu@umn.edu
Kin Man Yu
Affiliation:
kmyu@lbl.gov
Wladek Walukiewicz
Affiliation:
w_walukiewicz@lbl.gov
Joel W. Ager III
Affiliation:
jwager@lbl.gov
Eugene E. Haller
Affiliation:
eehaller@lbl.gov
Hai Lu
Affiliation:
wjs2@cornell.edu
William J. Schaff
Affiliation:
wjs2@cornell.edu
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Abstract

High-energy particle irradiation has been used to control the free electron concentration and electron mobility in InN by introducing native point defects that act as donors. A direct comparison between theoretical calculations and the experimental electron mobility suggests that scattering by triply-charged donor defects limits the mobility in irradiated samples across the entire range of electron concentrations studied. Thermal annealing of irradiated films in the temperature range 425°C to 475°C results in large increases in the electron mobility that approach the values predicted for singly-ionized donor defect scattering. It is suggested that the radiation-induced donor defects are stable, singly-charged nitrogen vacancies, and triply-charged, relaxed indium vacancy complexes that are removed by the annealing.

Keywords

annealingelectrical propertiesradiation effects
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 892 , 2005 , 0892-FF06-06
Copyright
Copyright © Materials Research Society 2006

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References

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