Hostname: page-component-77c89778f8-gq7q9 Total loading time: 0 Render date: 2024-07-18T08:19:56.976Z Has data issue: false hasContentIssue false
  • English
  • Français

Electronic Structure and Surface Properties of SrBi2Ta2O9 and Related Oxides

Published online by Cambridge University Press:  10 February 2011

J Robertson  and
C W Chen
J Robertson
Affiliation:
Engineering Dept, Cambridge University, Cambridge CB2 1PZ, UK
C W Chen
Affiliation:
Engineering Dept, Cambridge University, Cambridge CB2 1PZ, UK
Get access

Abstract

The electronic structure of SrBi2Ta2O9 and related oxides such as SrBi2Nb2O9, Bi2WO6 and Bi3Ti4O12 have been calculated by the tight-binding method. In each case, the band gap is about 4.1 eV and the band edge states occur on the Bi-O layers and consist of mixed O p/Bi s states at the top of the valence band and Bi p states at the bottom of the conduction band. The main difference between the compounds is that Nb 5d and Ti 4d states in the Nb and Ti compounds lie lower than the Ta 6d states in the conduction band. The surface pinning levels are found to pin Schottky barriers 0.8 eV below the conduction band edge.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 493: Symposium U – Ferroelectric Thin Film VI , 1997 , 249
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. MRS Bulletin (June, July, 1996)Google Scholar
2. Dimos, D, Warren, W L, Sinclair, M B, Tuttle, B A, J App Phys 76 4305 (1994)Google Scholar
3. Paz de Araujo, C A, dichiaro, J D, McMillan, L D, Scott, J F, Nature 374 627 (1995)Google Scholar
4. Jaffe, B, Cook, W R, Jaffe, H, ‘Piezoelectric Ceramics’ (Academic Press, London, 1971)Google Scholar
5. Withers, R L, Thompson, J G, Rae, A D, J Solid State Chem 94 404 (1991)Google Scholar
6. Rae, A D, Thompson, J G, Withers, R L, Acta Cryst B 48 418 (1992 Google Scholar
7. Robertson, J, Warren, W L, Tuttle, B A, Dimos, D, Smyth, D M, App Phys Lett 63 1519 (1993)Google Scholar
8. Warren, W L, Robertson, J, Dimos, D, Tuttle, B A, Pike, G E, Payne, D A, Phys Rev B 53 3080 (1996)Google Scholar
9. Robertson, J, Chen, C W, Warren, W L, Gutleben, C D, App Phys Lett 69 1704 (1996)Google Scholar
10. Robertson, J, Chen, C W, Warren, W L, Mat Res Soc Symp Proc 423 777 (1996)Google Scholar
11. Mattheiss, L F, Phys Rev B 6 4718 (1972)Google Scholar
12. Harrison, W A, ‘Electronic Structure’ (Freeman, San Francisco, 1980)Google Scholar
13. Robertson, J, Phil Mag B 43 497 (1981)Google Scholar
14. Mattheiss, L F, Hamann, D R, Phys Rev B 26 2686 (1982)Google Scholar
15. King-Smith, R. D., Vanderbilt, D., Phys Rev B 49 5828 (1994)Google Scholar
16. Hartmann, A J, Lamb, R N, Scott, J F, Johnson, P N, ElBouanani, M, Chen, C W, Robertson, J, to be publishedGoogle Scholar
17. Seager, C H, private communicationGoogle Scholar
18. Monch, W,. Surf Sci 300 928 (1994);Google Scholar
Monch, W, J App Phys 80 5076 (1996)Google Scholar
19. Gutleben, C D, App Phys Lett (Dec 1997)Google Scholar