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Electronic Theory of Gettering and Passivation of Impurities in Semiconductors

Published online by Cambridge University Press:  03 September 2012

K. Masuda-Jindo
K. Masuda-Jindo*
Affiliation:
Department of Materials science and Engineering, Tokyo Institute of Technology, Nagatsuta, Midoriku, Yokohama 227, Japan
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Abstract

We calculate the interaction (segregation) energies Egegr between the extended lattice defects (dislocations and grain boundaries) and impurity atoms in semiconductors by using a microscopic electronic theory. In particular, we use the tight-binding recursion method coupled to the generalized zeros-and poles method and investigate the interaction between the extended lattice defects and various kinds of the impurity atoms in semiconductors (Si). For the systematic understanding of the impurity gettering, we consider a wide variety of impurities, both sp-valence and transition metal impurities, Ti, V, Cr, Mn, Fe, Co, Ni and Cu. We will show that the variation of the gap states plays an important role in determining the interaction energy Esegr between the impurity atom and the extended lattice defects- We also discuss the passivation of the extended lattice defects by interstitial light impurities like hydrogen in Si crystal, we present a simple physical interpretation of the impurity gettering and passivation in semiconductors.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 262: Symposium E – Defect Engineering in Semiconductor Growth, Processing and Device Technology , 1992 , 999
Copyright
Copyright © Materials Research Society 1992

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References

[1] Tice, W. K. and Tan, T. Y., Appl. Phys. Lett., 28, 564 (1976).Google Scholar
[2] Tati, T. Y., Gardner, E. E. and Tice, W. K., Appl. Phys. Lett., 30, 175 (1977).Google Scholar
[3] Sparks, D. R., Chapman, R. G. and Alvi, N. S., Appl. Phys. Lett., 49, 525 (1986)Google Scholar
[4] Sinha, P. K., Glaunsinger, w. S. and Deng, R. -C., J. Mater. Res. 5, 1017 (1990).Google Scholar
[5] Chang, K. J. and Chadi, D. J., Phys. Rev. Lett., 60, 1422 (1988).Google Scholar
[6] Masuda-Jindo, K., Phys. Rev. B41, (1990) 8407.Google Scholar
[7] Verlet, L., Phys. Rev. 159, 98 (1967).Google Scholar
[8] Harrison, W. A., Electronic Structure and the Properties of Solids, (Freeman, San Francisco, 1980).Google Scholar
[9] Delerue, C., Lannoo, M. and Allan, G., Phys. Rev. B39, 1669 (1988).Google Scholar
[10] Liro, , Delerue, C. and Lannoo, M., Phys. Rev B36, 9362 (1987).Google Scholar
[11] Delerue, C. and Lannoo, M., Phys. Rev. B38, 3966 (1988).Google Scholar
[12] Masuda-Jindo, K., to be published.Google Scholar
[13] Fujita, Y. and Masuda-Jindo, K., J. Appl. Phys. 69, 3950 (1991)Google Scholar
[14] Li, W. -G. and Myles, C. W., Phys. Rev., B43, 9947 (1991).Google Scholar