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Electron-Phonon Scattering in GaN/AlN and GaAs/AlAs Quantum Wells

Published online by Cambridge University Press:  10 February 2011

T. F. Forbang  and
C. R. McIntyre
T. F. Forbang
Affiliation:
Institute for Computational Sciences and Informatics
C. R. McIntyre
Affiliation:
Department of Physics and Astronomy, MS 3F3 George Mason University, Fairfax, VA 22030
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Abstract

We have studied the effects on the phonon spectrum and on the electron-longitudinal optical phonon scattering in GaN/AlN and GaAs/AlAs quantum wells. Phonon modes and potentials have been calculated for both systems. Results for emission due to electroninterface phonons interactions are presented. We will discuss the implications for relaxation times and electron mobility due to modified LO-phonon scattering in both systems.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 482 , 1997 , 599
Copyright
Copyright © Materials Research Society 1998

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References

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