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The Enabling Role of Surface Passivation in Visible Photoluminescence from Si Nanoparticles

Published online by Cambridge University Press:  21 February 2011

A.A. Seraphin
Affiliation:
Department of Materials Science and Engineering, Massachusetts Institute of Technology Cambridge, MA 02139.
E. Werwa
Affiliation:
Department of Materials Science and Engineering, Massachusetts Institute of Technology Cambridge, MA 02139.
L.A. Chiu
Affiliation:
Intel Corporation, Santa Clara, CA 95052.
K.D. Kolenbrander
Affiliation:
Department of Materials Science and Engineering, Massachusetts Institute of Technology Cambridge, MA 02139.
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Abstract

Silicon nanocrystallites have been studied in a variety of passivating environments to study the role of surface passivation in visible light emission from the particles. Thin films of Si nanocrystallites have been deposited by a laser ablation supersonic expansion technique. The films show significant room temperature photoluminescence (PL) behavior only after processing to achieve surface passivation. Passivation effects on light emission are studied through PL emission spectroscopy on clusters in the gas phase, as well as films in a variety of passivating media. The intensity of PL emission seems to scale with the extent of surface passivation, but the specific nature of the passivating species is not critical in defining the wavelength of emitted light.

Type
Research Article
Copyright
Copyright © Materials Research Society 1994

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References

REFERENCES

1 Canham, L., MRS Bulletin XVIH (7), 22 (1993).CrossRefGoogle Scholar
2 Littau, K.A., Szajowski, P.J., Muller, A.J., Kortan, A.R., and Brus, L.E., J. Phys. Chem. 97, 1227 (1993).CrossRefGoogle Scholar
3 Fauchet, P.M., Tsai, C.C., Canham, L.T., Shimizu, I., and Aoyagi, Y., eds. Microcrystalline Semiconductors: Materials Science & Devices, Mater. Res. Soc. Proc. 283, (Materials Research Society, Pittsburgh, PA, 1993).Google Scholar
4 Pankove, J.I., Optical Processes in Semiconductors, 2nd ed. (Dover Publications, New York, 1975), p. 164.Google Scholar
5 Chiu, L.A., Seraphin, A.A., and Kolenbrander, K.D., J. Electron. Mater, (in press).Google Scholar
6 Werwa, E., Seraphin, A.A., Chiu, L.A., Zhou, C., and Kolenbrander, K.D., Appl. Phys. Lett. (submitted).Google Scholar
7 Takgahara, T. and Takeda, K., Phys. Rev. B 46, 15578 (1992).CrossRefGoogle Scholar
8 Ryan, J.L., MacKenzie, J.D., and Kolenbrander, K.D. (to be published).Google Scholar
9 Chiu, L.A., Seraphin, A.A., and Kolenbrander, K.D., 1993 MRS Fall Meeting, Symposium M: Growth, Processing, and Characterization of Semiconductor Heterostructures, (in press).Google Scholar
10 Li, K.-H., Tsai, C., Shih, S., Hsu, T., Kwong, D.L., and Campbell, J. C., J. Appl. Phys. 72 (8), 3816 (1992).CrossRefGoogle Scholar
11 Petrova-Koch, V., Muschik, T., Kux, A., Meyer, B.K., Koch, F., and Lehmann, V., Appl. Phys. Lett. 61, 943 (1992).CrossRefGoogle Scholar
12 Brus, L., Appl. Phys. A 53, 456 (1991).CrossRefGoogle Scholar