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Energy-Dependent Photoemission in the Study of Silicon-d Metal Interfaces

Published online by Cambridge University Press:  15 February 2011

L. Braicovich
L. Braicovich*
Affiliation:
Istituto di Fisica del Politecnico Milano, Milan 20133, (Italy)
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Abstract

New results are presented on the dependence on energy hv of the photoemission cross sections from d states of d atoms interacting with silicon (Si-Pd and Si-Ag). It is shown that the Cooper minimum is influenced by the atomic environment and that the Cooper effect is more pronounced when the interaction between the d atom and silicon becomes weaker. This approach together with an analysis of the shape of photoelectron spectra at the Cooper minimum is used in a discussion of the electron states in the reacted region of Si-Pd and Si-Mo interfaces.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 18: Symposium C – Interfaces and Contacts , 1982 , 327
Copyright
Copyright © Materials Research Society 1982

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References

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