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Enhanced Hydrogenation Due to Ultrasound Treatment in Polycrystalline Silicon: New Approach to Thin Film Defect Engineering

Published online by Cambridge University Press:  26 February 2011

S. Ostapenko ,
W. Henley ,
S. Karimpanakkel ,
L. Jastrzebski  and
J. Lagowski
S. Ostapenko
Affiliation:
Center for Microelectronics Research, University of South Florida, 4202 Fowler Ave., Tampa, FL 33620
W. Henley
Affiliation:
Center for Microelectronics Research, University of South Florida, 4202 Fowler Ave., Tampa, FL 33620
S. Karimpanakkel
Affiliation:
Center for Microelectronics Research, University of South Florida, 4202 Fowler Ave., Tampa, FL 33620
L. Jastrzebski
Affiliation:
Center for Microelectronics Research, University of South Florida, 4202 Fowler Ave., Tampa, FL 33620
J. Lagowski
Affiliation:
Center for Microelectronics Research, University of South Florida, 4202 Fowler Ave., Tampa, FL 33620
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Abstract

We applied the ultrasound treatment (UST) to improve properties of poly-Si thin films on glass substrates for thin-film transistor applications. A strong decrease of the sheet resistivity in hydrogenated films subjected to UST was observed. UST improves the film homogeneity as monitored by spatially resolved surface photovoltage mapping. Studies of hydrogenated thin-film transistors demonstrated remarkable UST induced improvement in transistor characteristics, especially, a reduction of leakage current by as much as one order of magnitude. All these effects are explained in terms of UST enhanced hydrogenation of poly-Si film.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 378: Symposium B – Defect and Impurity-Engineered Semiconductors and Devices , 1995 , 405
Copyright
Copyright © Materials Research Society 1995

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