Hostname: page-component-5c6d5d7d68-wbk2r Total loading time: 0 Render date: 2024-08-22T15:13:08.471Z Has data issue: false hasContentIssue false
  • English
  • Français

Enhancement of Crystallinity with Fluorinated Amorphous Silicon (a-Si:H;F) Film by XeCl Excimer Laser Annealing

Published online by Cambridge University Press:  15 February 2011

H. S. Choi ,
K. H. Jang ,
K. B. Kim  and
M. K. Han
H. S. Choi
Affiliation:
Department of Electrical Engineering, Seoul National University, San 56–1, Shinrim-dong, Kwanak-ku, Seoul 151–742, Korea
K. H. Jang
Affiliation:
Department of Electrical Engineering, Seoul National University, San 56–1, Shinrim-dong, Kwanak-ku, Seoul 151–742, Korea
K. B. Kim
Affiliation:
Department of Metallurgical Engineering, Seoul National University, San 56–1, Shinrim-dong, Kwanak-ku, Seoul 151–742, Korea
M. K. Han
Affiliation:
Department of Electrical Engineering, Seoul National University, San 56–1, Shinrim-dong, Kwanak-ku, Seoul 151–742, Korea
Get access

Abstract

The Effects of fluorine atoms on laser-induced crystallization have been studied. The defect states of hydrogenated amorphous silicon (a-Si:H) film, which are related to weak hydrogen bonds, were reduced by involving fluorine atoms, before laser annealing. In laser annealing, the crystallinity was also enhanced to 63 %, while that of a-Si:H was 45 % at the energy density of 300 mJ/cm2. It may be considered that the fluorine atoms reduce the hydrogen atoms cause to the degradation of film in laser annealing, and increase the heat capacity which results in promotion of crystallinity in melt-solid phase transition.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 377: Symposium A – Amorphous Silicon Technology 1995 , 1995 , 99
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Shimizu, K., Sugiura, U. and Matsumura, M., JJAP, Vol. 29, No. 10 (1990)Google Scholar
2. Wu, I. W., Lewis, Alan G., Huang, T.Y., and Chiang, Anne, SID Proceeding Vol 31/4 (1990)Google Scholar
3. Polman, A., Stoik, P.A., Mous, D.J.W., and Sinke, W.C., JAP 67 (9) (1990)Google Scholar
4. Sameshima, T., Hara, M., and Usui, S., JJAP, Vol 28, No. 12 (1989)Google Scholar
5. Roth, J.A. and Olson, , Mai. Res. Soc. Symp. Proc. 74, 319 (1987)Google Scholar
6. Shimizu, K., Hosoya, H., Sugiura, O., and Matsumura, M., JJAP, Vol. 30, No. 12B (1991)Google Scholar
7. Okada, Y., Chen, J., Campbell, I.H., Fauchet, P.M., and Wagner, S., JAP, 67 (4) (1990)Google Scholar
8. Okada, T., Iwaki, T., Kasahara, H., and Yamamoto, K., JJAP, Vol. 24 (1985)Google Scholar