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Enhancement of Oxygen Precipitation in Quenched Czochralski Silicon Crystals
Published online by Cambridge University Press: 25 February 2011
Abstract
We studied oxygen precipitation in quenched Czochralski silicon crystals. The larger the cooling rate and the higher the quenching temperature, the more oxygen precipitated. The defects enhancing oxygen precipitation are eliminated by annealing above 900°C. The defects are formed and removed repeatedly by quenching and slow cooling. We think that the aggregation of vacancies is related to those defects.
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