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Epitaxial Growth and Thermal Stability of CoSi2 Layer on (100) Si from Co-C Films without Capping Layer

Published online by Cambridge University Press:  10 February 2011

Hwa Sung Rhee ,
Dong Kyun Sohn  and
Byung Tae Ahn
Hwa Sung Rhee
Affiliation:
Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology. 373–1 Koosung-dong, Yusung-gu. Taejon 305–701, Korea, btahn@cais.kaist.ac.kr
Dong Kyun Sohn
Affiliation:
Research and Development Division, LG Semicon, Cheongju 361–480, Korea
Byung Tae Ahn
Affiliation:
Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology. 373–1 Koosung-dong, Yusung-gu. Taejon 305–701, Korea, btahn@cais.kaist.ac.kr
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Abstract

A uniform epitaxial CoSi2 layer was grown on (100) Si substrate by rapid thermal annealing at 800°C in N2 ambient without capping layers from an amorphous cobalt-carbon film. The amorphous cobalt-carbon film was deposited on Si substrate by the pyrolysis of cyclopentadienyl dicarbonyl cobalt. Co(η5-C5H5)(CO)2. at 350°C. The leakage current measured on the junction, fabricated with the epitaxial CoSi2 layer and annealed at 1000°C for 30 s. was as low as that of the as-fabricated junction without silicide. indicating that epitaxial (100) CoSi2 is thermally stable at temperatures even above 1000°C and has a potential applicability to the salicide process in sub-half micron devices.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 564: Symposium N – Advanced Interconnects and Contacts , 1999 , 145
Copyright
Copyright © Materials Research Society 1999

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