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Epitaxial Growth of AlN on Si Substrates with Intermediate 3C-SiC as Buffer Layers

Published online by Cambridge University Press:  10 February 2011

S. Q. Hong ,
H. M. Liaw ,
K. Linthicum ,
R. F. Davis ,
P. Fejes ,
S. Zollner ,
M. Kottke  and
S. R. Wilson
S. Q. Hong
Affiliation:
Motorola Inc., Semiconductor Products Sector, 2100 E. Elliot Road, Tempe, ZA 85282
H. M. Liaw
Affiliation:
Motorola Inc., Semiconductor Products Sector, 2100 E. Elliot Road, Tempe, ZA 85282
K. Linthicum
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695
R. F. Davis
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695
P. Fejes
Affiliation:
Motorola Inc., Semiconductor Products Sector, 2100 E. Elliot Road, Tempe, ZA 85282
S. Zollner
Affiliation:
Motorola Inc., Semiconductor Products Sector, 2100 E. Elliot Road, Tempe, ZA 85282
M. Kottke
Affiliation:
Motorola Inc., Semiconductor Products Sector, 2100 E. Elliot Road, Tempe, ZA 85282
S. R. Wilson
Affiliation:
Motorola Inc., Semiconductor Products Sector, 2100 E. Elliot Road, Tempe, ZA 85282
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Abstract

Single crystalline AlN was successfully grown on a 3C-SiC coated Si (111) substrate by organometallic vapor phase epitaxy. The 3C-SiC film was obtained via the conversion of the Si near-surface region to SiC using gas-source molecular beam epitaxy. The quality of the AlN was mainly controlled by that of the SiC. The effects of Si pits and SiC hillocks formed during the conversion on subsequent AlN growth are discussed. Process optimization is suggested to improve the SiC buffer layer for subsequent AlN deposition.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 572: Symposium Y – Wide-Bandgap Semiconductors for High-Power, High Frequency… , 1999 , 407
Copyright
Copyright © Materials Research Society 1999

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References

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