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Epitaxial Growth of MgO Single Crystal Thin Film in Oxygen Atmosphere

Published online by Cambridge University Press:  25 February 2011

M. H. Yang  and
C. P. Flynn
M. H. Yang
Affiliation:
1110 W. Green Street, Department of Physics and the Materials Research Laboratory, University. of Illinois at Urbana-Champaign, Urbana IL 61801
C. P. Flynn
Affiliation:
1110 W. Green Street, Department of Physics and the Materials Research Laboratory, University. of Illinois at Urbana-Champaign, Urbana IL 61801
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Abstract

We have studied the epitaxial growth of MgO single crystal thin films by depositing Mg onto MgO substrates in an oxygen atmosphere. This method provides a simple way to dope Mg18O layers uniformly into Mg16O. The well controlled layer thicknesses are suitable for bulk diffusion studies both in the MgO epilayer and the MgO substrate. The MgO growth rate was measured and found to be proportional to the Mg flux and to the square root of oxygen pressure at a given temperature, obeying the law of mass action. High quality MgO single crystal thin films, as indicated by RHEED and x-ray diffraction, were found to grow over u wide temperature range, as in the earlier work1 using e-beam evaporation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 279: Symposium A – Beam-Solid Interactions–Fundamentals and Applications , 1992 , 837
Copyright
Copyright © Materials Research Society 1993

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