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Epitaxial Growth of Near Noble Silicides on (111)Si by Rapid Thermal Annealing

Published online by Cambridge University Press:  28 February 2011

H. C. Cheng ,
I. C. Wu  and
L. J. Chen
H. C. Cheng
Affiliation:
Department of Electronics Engineering, National Chiao Tung University, Hsinchu, Taiwan, Republic of China.
I. C. Wu
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, Republic of China.
L. J. Chen
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, Republic of China.
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Abstract

The epitaxial growth of near noble silicides, including CoSi2, NiSi2, FeSi2, Pd2 Si, and PtSi on (111)Si, by rapid thermal annealing was studied by transmission electron microscopy. Single-crystalline CoSi2 was formed on (111)Si in the solid phase epitaxy regime by a non-ultra-high vacuum method. The effect on gas ambient was found to be of critical importance on the growth of single-crystal CoSi2 on (111)Si. The best NiSi2, FeSi2, Pd2 Si, and PtSi epitaxy grown on (111)Si by rapid thermal annealing were found to be of comparable quality to those grown by conventional furnace annealing.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 74: Symposium A – Beam-Solid Interactions and Transient Processes , 1986 , 653
Copyright
Copyright © Materials Research Society 1987

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