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Epitaxial Growth of NiSi2 on (111)Si Inside 0.1-0.6 μM in Size Oxide Openings Prepared by Electron Beam Lithography

Published online by Cambridge University Press:  15 February 2011

J. Y. Yew ,
L. J. Chen  and
K. Nakamura
J. Y. Yew
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, Republic of China, d803537@Oz.nthu.edu.tw
L. J. Chen
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, Republic of China, d803537@Oz.nthu.edu.tw
K. Nakamura
Affiliation:
National Nano Device Laboratory, Hsinchu, Taiwan, Republic of China
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Abstract

Epitaxial growth of NiSi2 on (111)Si inside 0.1-0.6 4m in size oxide openings prepared by electron beam lithography has been studied by field emission scanning electron microscopy, transmission electron microscopy and thin film stress measurement. Striking effects of size and shape of deep submicron oxide openings on the growth of NiSi2 epitaxy were observed. Epitaxial growth of NiSi2 of single orientation on (111)Si was found to occur at a temperature as low as 400 °C inside both contact holes and linear openings of 0.3. μm or smaller in size. Contact holes were found to be more effective in inducing the epitaxial growth of NiSi2 of single orientation than that of linear openings of the same size. The effects of size and shape of lateral confinement on the epitaxial growth of NiSi2 on (111)Si are correlated with the stress level inside oxide openings.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 427: Symposium K – Advanced Metallization for Future ULSI , 1996 , 547
Copyright
Copyright © Materials Research Society 1996

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