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Epitaxial Iridium Growth on Strontium Titanate

Published online by Cambridge University Press:  17 March 2011

Z. Dai ,
A.P. Li ,
C. Bednarski ,
L. I. McCann  and
B. Golding
Z. Dai
Affiliation:
Department of Physics & Astronomy and Center for Sensor Materials, Michigan State University, E. Lansing, MI 48824-1116, U. S. A.
A.P. Li
Affiliation:
Department of Physics & Astronomy and Center for Sensor Materials, Michigan State University, E. Lansing, MI 48824-1116, U. S. A.
C. Bednarski
Affiliation:
Department of Physics & Astronomy and Center for Sensor Materials, Michigan State University, E. Lansing, MI 48824-1116, U. S. A.
L. I. McCann
Affiliation:
Department of Physics & Astronomy and Center for Sensor Materials, Michigan State University, E. Lansing, MI 48824-1116, U. S. A.
B. Golding
Affiliation:
Department of Physics & Astronomy and Center for Sensor Materials, Michigan State University, E. Lansing, MI 48824-1116, U. S. A.
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Abstract

Epitaxial (100) iridium films have been grown on (100) SrTiO3 (STO) substrates by electron beam evaporation. The epitaxial relationship between the iridium film and STO substrate was determined to be Ir(001)[100]//STO(001)[100]. A systematic study of the role of STO substrate surface preparation, Ir thickness, and substrate temperature on Ir film crystallinity and morpholo- gy has been performed. The best Ir films typically have small Ir(200) XRD linewidths < 0.3 °, surface roughness of 0.2 nm, and low ion channeling yields, χmin≤ 4%, when deposited at 800 °C. Films generally become smoother with better crystallinity when the film thickness approaches 300 nm. A growth mode with initial island formation and subsequent layer-by-layer appears to take place at higher substrate temperatures, whereas at lower temperatures the film grows in a 3D mode.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 648: Symposium P – Growth, Evolution & Properties of Surfaces, Thin Films, and Self Organized Structure , 2000 , P11.35
Copyright
Copyright © Materials Research Society 2001

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