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Epitaxy of TiO2 Thin Film on Sapphire by MOCVD

Published online by Cambridge University Press:  21 February 2011

H. L. M. Chang ,
H. You ,
J. C. Parker  and
D. J. Lam
H. L. M. Chang
Affiliation:
Materials Science Division, Argonne National Laboratory, Argonne, IL 60439
H. You
Affiliation:
Materials Science Division, Argonne National Laboratory, Argonne, IL 60439
J. C. Parker
Affiliation:
Materials Science Division, Argonne National Laboratory, Argonne, IL 60439
D. J. Lam
Affiliation:
Materials Science Division, Argonne National Laboratory, Argonne, IL 60439
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Abstract

Epitaxial TiO2 films have been successfully grown on sapphire substrate at temperatures from 400 to 800°C by thermally decomposing titanium isopropoxide in the presence of O2 in a cold wall low pressure MOCVD system. Rutile film was grown on sapphire (1120) at 800°C with (101) being the growth plane and 〈010〉 being parallel to sapphire 〈0001〉. Anatase film was grown on sapphire (0001) at 400°C with (112) being the growth plane and 〈112〉 being parallel to sapphire 〈1100〉. The film structure as a function of substrate surface orientation and growth temperature is discussed in detail.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 187: Symposium J – Thin Film Structures and Phase Stability , 1990 , 261
Copyright
Copyright © Materials Research Society 1990

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References

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