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Equilibrium Shape of CoSi2 in Silicon
Published online by Cambridge University Press: 21 February 2011
Abstract
The energetics associated with the formation of CoSi2 have been investigated by using the equilibrium shape of isolated precipitates. Two types of precipitates were studied: CoSi2 equilibrated at the Si surface and CoSi2 equilibrated within the Si lattice. CoSi2 precipitates form by facetting along {111} and {1100} planes in Si. Using a reverse Wulff approach, a ratio of interfacial free energies of γ{100} / γ{111) has been measured to be 1.43 ± 0.07.
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- Copyright © Materials Research Society 1993
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