Hostname: page-component-77c89778f8-m42fx Total loading time: 0 Render date: 2024-07-19T19:11:52.486Z Has data issue: false hasContentIssue false
  • English
  • Français

Etching Properties of Hydrogenated Amorphous Silicon

Published online by Cambridge University Press:  21 February 2011

Y. S. Tsuo ,
Y. Xu ,
D. W. Baker  and
S.K Deb
Y. S. Tsuo
Affiliation:
Solar Energy Research Institute, Golden, Colorado 80401–3393
Y. Xu
Affiliation:
Solar Energy Research Institute, Golden, Colorado 80401–3393
D. W. Baker
Affiliation:
Solar Energy Research Institute, Golden, Colorado 80401–3393
S.K Deb
Affiliation:
Solar Energy Research Institute, Golden, Colorado 80401–3393
Get access

Abstract

We have studied wet-chemical and dry etching properties of doped and undoped hydrogenated amorphous silicon (a-Si:H) films with bonded hydrogen content varying from 0 to 20 at.%. Etching processes studied include (1) wet-chemical etching using solutions of KOH, isopropyl alcohol (IPA), and H2O, (2) hydrogen plasma etching, and (3) XeF2 vapor etching.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 219: Symposium A – Amorphous Silicon Technology - 1991 , 1991 , 805
Copyright
Copyright © Materials Research Society 1991

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Wolf, S. and Tauber, R.N., “Silicon Processing for the VLSI Era,” Lattice Press, Sunset Beach, California, 1987.Google Scholar
2. Haller, I., Lee, Y.H., Nocera, J.J. Jr, and Jaso, M.A., J. Electrochem. Soc.:Solid-State Science and Technology 135, 2042 (1988).Google Scholar
3. Shanks, H., Fang, C.J., Ley, L., Cardona, M., Demond, F.J., and Kalbitzer, S., Phys. Status Solidi 100, 43 (1980).Google Scholar
4. Tsuo, Y.S., Smith, E.B., and Deb, S.K., Appl. Phys. Lett. 51, 1436 (1987).Google Scholar
5. Clarke, P.E., Field, D., and Klemperer, D.F., J. Appl. Phys. 67, 1525 (1990).Google Scholar
6. Barkanic, J.A., Reynolds, D.M., Jaccodine, R.J., Stenger, H.G., Parks, J., and Vedage, H., Solid State Technology, April 1989, pp. 109–115.Google Scholar
7. Langford, A.A., Stafford, B.L., and Tsuo, Y.S., in Proceedings of the 19th IEEE Photovoltaic Specialists Conference (IEEE, 1987) pp. 573–576.Google Scholar
8. Tsuo, Y.S., Xu, Y., Crandall, R.S., Ullal, H.S., and Emery, K., Mat. Res. Soc. Symp. Proc. Vol. 149, 471 (1989).Google Scholar
9. Okada, Y. and Wagner, S., Mat. Res. Soc. Symp. Proc. Vol. 192, 541 (1990).Google Scholar
10. van Oort, R.C., Geerts, M.J., van den Heuvel, J.C., and Metselaar, J.W., Electronics Lett. 23, 967 (1987).CrossRefGoogle Scholar
11. Winters, H.F. and Coburn, J.W., Appl. Phys. Lett. 34, 70 (1979).CrossRefGoogle Scholar
12. Donnelly, V.M., Appl. Phys. Lett. 44, 1129 (1984).Google Scholar
13. Tsuo, Y.S., Weil, R., Asher, S., Nelson, A., Xu, Y., and Tsu, R., in Proceedings of the 19th IEEE Photovoltaics Specialists Conference (IEEE, 1987) pp. 705–708.Google Scholar
14. Palik, E.D., Faust, J.W., Gray, H.F., and Green, R.F., J. Electrochem. Soc.:Solid -State Science and Technology 129, 2051 (1982).Google Scholar
15. Lee, Y.H. and Chen, M.M., J. Vac. Sci. technol. B4, 468 (1986).Google Scholar
16. Deng, X.J., Tsuo, Y.S., and Trefny, J.U., in Proceedings of the 21th IEEE Photovoltaics Specialists Conference (IEEE, 1990) pp. 1591–1594.Google Scholar